Erratum
Erratum to: A new two-dimensional analytical subthreshold behavior model for submicron Triple Material Gate (TM) GaN MESFET
Détails
| Langue originale | English |
|---|---|
| Revue | Journal of Computational Electronics |
| Volume | 13 |
| Numéro | 3 |
| Pages | 732 |
| Éditeur | Springer Science+Business Media |
| ISSN | 1569-8025 · 1572-8137 |
| DOI | 10.1007/s10825-014-0602-z |
| Statut de publication | Publié — 5 août 2014 |
Mots-clés
Empreinte
- GaN-based semiconductor devices and materials
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
- subthreshold behavior
- two-dimensional analytical model
- GaN MESFET
- submicron transistors
- device modeling
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Physics and Astronomy
- Engineering