Erratum
Erratum to: A new two-dimensional analytical subthreshold behavior model for submicron Triple Material Gate (TM) GaN MESFET
Details
| Original language | English |
|---|---|
| Journal | Journal of Computational Electronics |
| Volume | 13 |
| Issue number | 3 |
| Pages | 732 |
| Publisher | Springer Science+Business Media |
| ISSN | 1569-8025 · 1572-8137 |
| DOI | 10.1007/s10825-014-0602-z |
| Publication status | Published — 5 August 2014 |
Keywords
Fingerprint
- GaN-based semiconductor devices and materials
- Advancements in Semiconductor Devices and Circuit Design
- Silicon Carbide Semiconductor Technologies
- subthreshold behavior
- two-dimensional analytical model
- GaN MESFET
- submicron transistors
- device modeling
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Physics and Astronomy
- Engineering