Hafnium dioxide effect on the electrical properties of M/n-GaN structureSadoun Ali, Sedik Mansouri, M. Chellali, Nacereddine Lakhdar, Abdelkader Hima, Z. BenamaraMaterials Science-PolandVolume 38، (1)، Pages 165-1732020Article Accès ouvert 3
Enhancement of efficiency and stability of CH3NH3GeI3 solar cells with CuSbS2Abdelkader Hima, Nacereddine LakhdarOptical MaterialsVolume 99، Pages 1096072019Article Accès fermé 132
Electron transport material effect on performance of perovskite solar cells based on CH3NH3GeI3Nacereddine Lakhdar, Abdelkader HimaOptical MaterialsVolume 99، Pages 1095172019Article Accès fermé 377
Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulationAli Sadoun, S. Mansouri, M. Chellali, Nacereddine Lakhdar, Abdelkader Hima, Z. BenamaraMaterials Science-PolandVolume 37، (3)، Pages 496-5022019Article Accès ouvert 8
An optimized perovskite solar cell designs for high conversion efficiencyAbdelkader Hima, Nacereddine Lakhdar, Boubaker Benhaoua, Achour Saadoune, Imad Kemerchou, Fatiha RogtiSuperlattices and MicrostructuresVolume 129، Pages 240-2462019Article Accès fermé 199
Modeling of birefringence properties in SiOxNy film rib optical waveguidesMohammed Boulesbaa, Ahmed Bouchekhlal, Fouad Chebbara, Brahim Lakehal, Nacereddine LakhdarVolume 6، Pages 1-42018Autre Accès fermé 4
Optimization of ZnTe:O solar cell using genetic algorithmsBrahim Lakehal, Nacereddine Lakhdar, Fouad Chebbara, Mohammed Boulesbaa, Abdelghani Dendouga, Toufik BendibPages 1-42018Autre Accès ferméPlusieurs sources 1
MDAC Design for an 8-bit 40 MS/s Pipelined ADC in a 0.18μm CMOS ProcessAbdelghani Dendouga, Slimane Oussalah, Nacereddine Lakhdar, Brahim LakehalVolume 20، Pages 1-32018Autre Accès ferméPlusieurs sources
Performance enhancement of ZnTeO solar cell by optimizing physical and geometrical parametersBrahim Lakehal, Zohir Dibi, Nacereddine LakhdarVolume 95، Pages 1-42017Autre Accès ferméPlusieurs sources 2
Modeling of submicron triple material GaAs MESFET including the effect of third region length for microwave frequency applicationsNacereddine Lakhdar, Brahim LakehalPages 1-52017Autre Accès ferméPlusieurs sources 1
An analytical model for submicron dual material gate GaNMESFET including the temperature effectsNacereddine Lakhdar, Brahim LakehalVolume 78، Pages 1-52017Autre Accès fermé
Effect of gate engineering in submicron GaAs MESFET for microwave frequency applicationsNacereddine Lakhdar, Brahim LakehalJournal of SemiconductorsVolume 37، (4)، Pages 0440022016Article Accès fermé 4
Electrical equivalent model of intermediate band solar cell using PSpiceBrahim Lakehal, Zohir Dibi, Nacereddine Lakhdar, Abdelghani DendougaSadhanaVolume 40، (5)، Pages 1473-14792015Article Accès fermé 4
A new two-dimensional analytical subthreshold behavior model for submicron Triple Material Gate (TM) GaN MESFETNacereddine Lakhdar, F. DjeffalJournal of Computational ElectronicsVolume 13، (3)، Pages 726-7312014Article Accès fermé 1