An analytical model for submicron dual material gate GaNMESFET including the temperature effects

In this paper, a temperature dependent analytical model of submicron Dual Material gate (DM) Gallium Nitride (GaN) MESFET suitable for high power applications is described. The model takes into account the effect of various temperature dependent device parameters in order to develop an accurate current-voltage model of the device under various high temperature (300K-500K) conditions. The model is then extended to evaluate the temperature dependence of transconductance and output conductance. The obtained results have been verified by its good agreement with 2D numerical simulations.

• GaN MESFET
• dual material gate
• submicron transistors
• temperature dependence
• analytical device model
• current-voltage characteristics
• transconductance
• output conductance
• high-power devices
• high-temperature operation

• GaN-based semiconductor devices and materials
• Silicon Carbide Semiconductor Technologies
• Advancements in Semiconductor Devices and Circuit Design
• GaN MESFET
• dual material gate
• submicron transistors
• temperature dependence
• analytical device model
• current-voltage characteristics
• transconductance
• output conductance
• Condensed Matter Physics
• Electrical and Electronic Engineering
• Physics and Astronomy
• Engineering