Effect of specularity parameter and convective coefficient on heat transport in semiconductor devices based on mesoscopic methodOussama Zobiri، Abdelmalek Atia، Müslüm ArıcıPhysica B Condensed Matterالمجلّد 670، الصفحات 4153632023مقال وصول مغلق 2
Mesoscale investigation of specularity parameter impact on heat transport in graphene nanoribbonOussama Zobiri، Abdelmalek Atia، Müslüm ArıcıPhysica E Low-dimensional Systems and Nanostructuresالمجلّد 139، الصفحات 1151532022مقال وصول مغلق 14
A three-dimensional analysis of heat transfer based on mesoscopic method in nanoscale Si-MOSFET and Gr-FETOussama Zobiri، Abdelmalek Atia، Müslüm ArıcıMicro and Nanostructuresالمجلّد 163، الصفحات 1071232021مقال وصول مغلق 13
A critical evaluation based on Lattice Boltzmann method of nanoscale thermal behavior inside MOSFET and SOI-MOSFETOussama Zobiri، Abdelmalek Atia، Müslüm ArıcıMicroelectronics Journalالمجلّد 115، الصفحات 1051912021مقال وصول مغلق 10
Study of robin condition influence on phonon nano-heat conduction using meso-scale method in MOSFET and SOI-MOSFET devicesOussama Zobiri، Abdelmalek Atia، Müslüm ArıcıMaterials Today Communicationsالمجلّد 26، الصفحات 1020312021مقال وصول مغلق 21
Modeling Energy Bands in Type II SuperlatticesZoubir Becer، Abdeldjalil Bennecer، Nouredine SengougaCrystalsالمجلّد 9، (12)، الصفحات 6292019مقال وصول مفتوح 13
Modeling of submicron triple material GaAs MESFET including the effect of third region length for microwave frequency applicationsNacereddine Lakhdar، Brahim Lakehalالصفحات 1-52017أخرى وصول مغلقعدّة مصادر 1
An analytical model for submicron dual material gate GaNMESFET including the temperature effectsNacereddine Lakhdar، Brahim Lakehalالمجلّد 78، الصفحات 1-52017أخرى وصول مغلق
Effect of gate engineering in submicron GaAs MESFET for microwave frequency applicationsNacereddine Lakhdar، Brahim LakehalJournal of Semiconductorsالمجلّد 37، (4)، الصفحات 0440022016مقال وصول مغلق 4
Erratum to: A new two-dimensional analytical subthreshold behavior model for submicron Triple Material Gate (TM) GaN MESFETN. LakhdarJournal of Computational Electronicsالمجلّد 13، (3)، الصفحات 7322014تصويب وصول مفتوح
A new two-dimensional analytical subthreshold behavior model for submicron Triple Material Gate (TM) GaN MESFETNacereddine Lakhdar، F. DjeffalJournal of Computational Electronicsالمجلّد 13، (3)، الصفحات 726-7312014مقال وصول مغلق 1