Spin Coating Method Fabricated of In 2 O 3 Thin Films

Abstract In this work, the In 2 O 3 thin films have been fabricated using a spin coating technique; this technique was prepared in our laboratory. The effect of the layer times (3, 5, 7 and 9 times) on optical and structural properties was investigated. In 2 O 3 thin films were fabricated by dissolving 0.2 M of the indium chloride dehydrate InCl 3 .2H 2 O in the absolute H2O. The In 2 O 3 thin films were crystallized at a temperature of 600 °C with pending time of 1 hour. The optical property shows that the prepared In 2 O 3 thin films for 3 and 5 times have a transmission of about 85 %. The maximum bandgap energy was 3.69 eV for 5 times and the lowest Urbach energy was 0.47 eV for 9 times. From XDR all fabricated In 2 O 3 thin films having one diffraction crystal plan is (222) peak intensity, this attribution have good crystalline structure with minimum crystallite size of the (222) plan is 59.69 nm. The prepared In 2 O 3 thin films can be used in photovoltaic applications due to the existing phase and higher transmission.

• indium oxide
• In2O3 thin films
• spin coating
• layer thickness
• optical band gap
• Urbach energy
• optical transmission
• crystallite size
• photovoltaic materials

• ZnO doping and properties
• Advanced Materials and Semiconductor Technologies
• Thin-Film Transistor Technologies
• indium oxide
• In2O3 thin films
• spin coating
• layer thickness
• optical band gap
• Urbach energy
• optical transmission
• crystallite size
• Materials Chemistry
• Electrical and Electronic Engineering
• Materials Science
• Engineering