Role of High-K and Gate Engineering in Improving Rf/Analog Performances of In 0.2 Ga0.8As/Al0.3Ga0.7As HEMT

This work deals with the potential benefit of double gate field plate MOS-HEMT using Si3N4 as high-K for RF and analog applications. Analog and RF performances investigation is done using 2D Silvaco TCAD for a wide range of gate voltage (VGS). The designed device shows better performances in terms of drain current (Id), cutoff frequency (fc), trans conductance (gm) in contrast to the conventional ...