In0.53 Ga 0.47 As Triangular GAA MOSFETs

Triangular GAA MOSFETs (gate-all-around metal oxide semiconductor) with III-V material in channel has been simulated by Atlas Tcad-Silvaco software, we has used for obtain DC, AC characteristics analysis. Those devices provide superior electrostatic control of channel, A different performance (gm, DIBL, ION/IOFF) with 14 nm channel length viewing the impunity to short channel effects with 3D advan...