Improved Performance of 365-nm LEDs by Inserting an Un-Doped Electron-Blocking Layer

In this letter, the ultraviolet light emitting diode (UV-LED) with an undoped Al0.23Ga0.77N electron-blocking layer (EBL) between the p-type doped Al0.23Ga0.77N EBL and last barrier was proposed. After inserting the undoped EBL, both the photoluminescence and electroluminescence ([::EL::]) characteristics of UV-LED were significantly improved. As the undoped EBL was inserted, the 365-nm UV-LED pos...