مقال
Effect of antimony doping on the structural, optical and electrical properties of SnO2 thin films prepared by spray ultrasonic
Achour Rahal، Atmane Benhaoua، Chaker Bouzidi، Boubaker Benhaoua✉، Brahim Gasmi
التفاصيل
| اللغة الأصلية | English |
|---|---|
| المجلّة | Superlattices and Microstructures |
| المجلّد | 76 |
| الصفحات | 105-114 |
| الناشر | Elsevier BV |
| ISSN | 0749-6036 · 1096-3677 |
| DOI | 10.1016/j.spmi.2014.09.024 |
| حالة النشر | منشور — 19 أكتوبر 2014 |
الكلمات المفتاحية
البصمة
- ZnO doping and properties
- Thin-Film Transistor Technologies
- Chalcogenide Semiconductor Thin Films
- antimony doping
- SnO2 thin films
- antimony-doped tin oxide
- crystallographic texture
- lattice parameters
- oxygen vacancies
- crystallite size
- optical band gap
- Materials Chemistry
- Electrical and Electronic Engineering
- Materials Science
- Engineering