مقال
Effect of annealing atmosphere on the electrical properties of nickel oxide/zinc oxide p–n junction grown by sol–gel technique
Mohamed Jlassi✉، Imen Sta، Messaoud Hajji، Boubaker Haoua، Hatem Ezzaouia
التفاصيل
| اللغة الأصلية | English |
|---|---|
| المجلّة | Materials Science in Semiconductor Processing |
| المجلّد | 26 |
| الصفحات | 395-403 |
| الناشر | Elsevier BV |
| ISSN | 1369-8001 · 1873-4081 |
| DOI | 10.1016/j.mssp.2014.05.008 |
| حالة النشر | منشور — 29 ماي 2014 |
الكلمات المفتاحية
البصمة
- ZnO doping and properties
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- nickel oxide
- zinc oxide
- p-n junction
- heterojunction
- annealing atmosphere
- nitrogen annealing
- thin films
- optical band gap
- Materials Chemistry
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
- Materials Science
- Physics and Astronomy
- Engineering