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جامعة الشهيد حمه لخضر — الواديبوابة البحث العلمي
ورقة مؤتمر

ANN-based-modling to study the Neutron radiation effects on MOS devices

Fayçal Meddour✉، Abderrahim Meddour، Mohamed Amir Abdi، Mounir Amir

الملخّص

In this work, a MOS devices model based on the artificial neural network (ANN) is proposed. This model is designed in order to use it in the neutron radiation effects. It allows us to infer several information about neutrons such as angle $\theta$, fluence, drain source voltage (Vds), voltage between the drain and source, (Vgs) voltage between the gate and source, (Ids) current between the drain a...

التفاصيل

اللغة الأصليةEnglish
المجلّة2018 International Conference on Communications and Electrical Engineering (ICCEE)
رقم المقال8634508
الصفحات1-4
DOI10.1109/ccee.2018.8634508
حالة النشرمنشور — 2018