A new two-dimensional analytical subthreshold behavior model for submicron Triple Material Gate (TM) GaN MESFETNacereddine Lakhdar، F. DjeffalJournal of Computational Electronicsالمجلّد 13، (3)، الصفحات 726-7312014مقال وصول مغلق 1
Erratum to: A new two-dimensional analytical subthreshold behavior model for submicron Triple Material Gate (TM) GaN MESFETN. LakhdarJournal of Computational Electronicsالمجلّد 13، (3)، الصفحات 7322014تصويب وصول مفتوح
